The performance we talked about earlier is for the standard 22FFL devices which had a fin pitch of 108nm. In addition to those devices, Intel introduced 144nm pitch devices for ultra-low leakage. 22FFL ULL devices have sub-1 picoamp per micron total leakage. Those devices provide up to an additional 75x reduction in leakage.
In the graph above, Intel’s original 22nm process (on the upper-left corner) can be used as a reference. The high-performance 22FFL devices start at the very top-right corner. Those six points represent the six devices we mentioned earlier (LP, Nom, HP, LPLVT, LVT, ULVT). There is a range of over 500x between the highest- and lowest- leakage among those devices. The Ultra-low leakage devices can offer an additional 75x reduction in leakage. We believe those are among the lowest, if not the lowest, total leakage logical devices reported with sub 1-picoamp per micron leakage.
We have summarized the three types of logic devices offered by Intel’s 22FFL.
|22FFL Logic Devices|
|High Performance||Low Power||Ultra Low Power|
|Gate Pitch||108 nm||144 nm|
|Fin Pitch||45 nm|
@ 0.70 V
|nMOS||1.24 mA/μm||0.81 mA/μm||0.10 mA/μm|
|pMOS||1.22 mA/μm||0.81 mA/μm||0.10 mA/μm|
|Ioff||10 nA/μm||100 pA/μm||1 pA/μm|