22FFL offers I/O transistors which operate at the higher voltage of 1.8 volts. Those transistors are very similar to the logic devices. They have a straight fin with an identical pitch of 45 nm consisting of a high-κ metal gate with strained channel process. Those devices use a gate length of 160nm. Below is the cross section of the fin shown in the left image and a cross section of the gate on the right.
Three thick gate devices were developed to support 1.8 V, 1.5 V, and 1.2 V operations. Those transistors have gate length of 90 nm, 120 nm, and 160 nm respectively (for comparison LL logic Lg = 74 nm). For those devices Intel reported very good drive currents which are considerably higher than what they had in their previous 22m technology. For nMOS they reported around 1.11 mA/um and for pMOS it’s around 1.02 mA/um for the highest voltage cells.
Overall, drive current for 22FFL high voltage transistors are roughly 33% for nMOS and 35% for pMOS over their original 22nm process.
Device Summary (Analog and I/O)
We have summarized the six types of analog and high voltage devices offered by Intel’s 22FFL.
|22FFL Analog and I/O Devices|
|Analog Transistors||High Voltage Transistors|
|Gate Pitch||144 nm||216 nm||270 nm||216 nm||216 nm||270 nm|
|Fin Pitch||45 nm|
|Perf Unit||GM*Rout||IDSAT (NMOS/PMOS)|
|Performance||47||54||60||0.77/0.61 mA/μm||1.01/0.87 mA/μm||1.11/1.02 mA/μm|