VLSI 2018: GlobalFoundries 12nm Leading-Performance, 12LP
Performance
Compared to the 14LPP, the improved 12LP transistors achieved around 15% faster ring oscillator AC performance for identical IDDQ levels.

Likewise, compared to 14LPP, GlobalFoundries is reporting 6% and 22% higher DC performance for nFET and pFET respectively for identical IDOFF.
12LP DC Performance Improvements Over 14LPP | |
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nFET | pFET |
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(VLSI 2018, GlobalFoundries) |
The device performance does not have any major impact on reliability and GlobalFoundries reported comparable or better reliability values over their 14LPP process.

7.5T Library Power
For the new seven and a half tracks library that was added in 12nm, GlobalFoundries is reporting a 16% reduction in the total power consumed for identical frequencies. Note that this comparison is done against the 14nm 14LPP 9T high-performance cells.

SRAM Performance
Although 12nm does not bring new SRAM cells, like everything else, they enjoy the benefits of the improved device performance. GlobalFoundries reported around a 30% reduction in leakage (Istby) for comparable Iread levels. Likewise, 12LP SRAM FETs showed comparable Vt mismatch to 14LPP.

12nm, A Platform Extension & Customer Ease

Overall, the low-risk, high reward strategy for 12LP has worked well and GlobalFoundries is reporting yield comparable to 14LPP with a number of customers, including AMD, already leveraging the process for mass production products. GlobalFoundries has also extended the platform to include new RF and analog applications as well as automotive-grade applications.
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