VLSI 2018: GlobalFoundries 12nm Leading-Performance, 12LP
Performance
Compared to the 14LPP, the improved 12LP transistors achieved around 15% faster ring oscillator AC performance for identical IDDQ levels.
![](https://fuse.wikichip.org/wp-content/uploads/2018/07/vlsi_2018_12lp_ac_perf.png)
Likewise, compared to 14LPP, GlobalFoundries is reporting 6% and 22% higher DC performance for nFET and pFET respectively for identical IDOFF.
12LP DC Performance Improvements Over 14LPP | |
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nFET | pFET |
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(VLSI 2018, GlobalFoundries) |
The device performance does not have any major impact on reliability and GlobalFoundries reported comparable or better reliability values over their 14LPP process.
![](https://fuse.wikichip.org/wp-content/uploads/2018/07/vlsi_2018_12lp_reliability.png)
7.5T Library Power
For the new seven and a half tracks library that was added in 12nm, GlobalFoundries is reporting a 16% reduction in the total power consumed for identical frequencies. Note that this comparison is done against the 14nm 14LPP 9T high-performance cells.
![](https://fuse.wikichip.org/wp-content/uploads/2018/07/vlsi_2018_12lp_75t_power_improvement.png)
SRAM Performance
Although 12nm does not bring new SRAM cells, like everything else, they enjoy the benefits of the improved device performance. GlobalFoundries reported around a 30% reduction in leakage (Istby) for comparable Iread levels. Likewise, 12LP SRAM FETs showed comparable Vt mismatch to 14LPP.
![](https://fuse.wikichip.org/wp-content/uploads/2018/07/vlsi_2018_12lp_sram_leakage.png)
12nm, A Platform Extension & Customer Ease
![](https://fuse.wikichip.org/wp-content/uploads/2018/07/vlsi_2018_12lp_yield-300x227.png)
Overall, the low-risk, high reward strategy for 12LP has worked well and GlobalFoundries is reporting yield comparable to 14LPP with a number of customers, including AMD, already leveraging the process for mass production products. GlobalFoundries has also extended the platform to include new RF and analog applications as well as automotive-grade applications.
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