Samsung Foundry

Samsung 3nm GAAFET Enters Risk Production; Discusses Next-Gen Improvements

July 5, 2022July 5, 2022 David Schor 2 nm, 3 nm, 3GAAE, 3GAAP, 3GAE, 3GAP, 5LPE, GAAFET, nanosheet, Samsung, Samsung Foundry

Samsung 3nm GAAFET Enters Risk Production; Discusses Next-Gen Improvements

Foundries IEDM 2021 Process Technologies Subscriber Only Content

A Look At Samsung’s 4LPE Process

June 26, 2022June 26, 2022 David Schor 4 nm, 4LPE, 4LPP, FinFET, Samsung, Samsung Foundry, subscriber only (general)

A look at Samsung’s last leading-edge FinFET process node, 4nm 4LPE.

Foundries Process Technologies Subscriber Only Content

Samsung 17nm follows Intel 16

May 22, 2022May 22, 2022 David Schor 14 nm, 14LPP, 17 nm, 17LPV, 28 nm, 28LPP, Intel, Intel Foundry Services (IFS), Samsung, Samsung Foundry, subscriber only (general)

Samsung follows Intel 16 with a low-cost high-performance, 17-nanometer, 17LPV node.

Circuit Design Foundries ISSCC 2021 Process Technologies Roadmaps Subscriber Only Content VLSI 2021

Samsung 3nm GAA Inches Towards Productization With SRAM, SoC Test Vehicles

July 8, 2021July 8, 2021 David Schor 3 nm, GAA, Samsung, Samsung Foundry, subscriber only (general)

Samsung tapes out 3nm GAA test vehicle as it inches towards mass production

Foundries IEDM 2020 Process Technologies Roadmaps Subscriber Only Content

Samsung Details 5nm and 4nm; Adds 8LPA, 5LPP, and 4LPP Nodes; Readies 3nm GAA For Next Year

May 21, 2021June 24, 2021 David Schor 3 nm, 4 nm, 4LPE, 4LPP, 5 nm, 5LPE, 5LPP, 7 nm, IEDM 2020, Samsung, Samsung Foundry, subscriber only (general)

Samsung revealed more details of its 5LPE process technology which recently ramped, gave a roadmap status update along with new stop-gap nodes announcement.