A Look At Samsung’s 4LPE Process
A look at Samsung’s last leading-edge FinFET process node, 4nm 4LPE.
Read moreA look at Samsung’s last leading-edge FinFET process node, 4nm 4LPE.
Read moreTSMC introduces a new 5-nanometer derivative – an enhanced performance N4P node.
Read moreTSMC 2021 foundry update
Read moreA look at the current state of leading-edge foundries for the first quarter of 2021.
Read moreTSMC reports a flat Q1 amid the COVID-19 pandemic, ramps its 5nm node with good yield and discloses key 3-nanometer (N3) details. N3 will be a full node jump over N5 and is expected to offer over a quarter-billion transistors per each millimeter square of silicon.
Read moreUpdate and analysis of TSMC 7-nanometer node low-power and high-performance cells, 2nd generation 7nm, and the design technology co-optimization (DTCO) effort that went into the Snapdragon 855 SoC.
Read moreTSMC 5-nanometer node has entered risk production with PDKs available for production design. Here’s is our initial density estimates.
Read moreA look at GlobalFoundries 12nm Leading Performance technology, 12LP, an enhanced 14nm process. The process was recently presented at the 2018 Symposia on VLSI Technology and Circuits.
Read moreA look at Samsung’s 8nm 8LPP process that was recently disclosed at the 38th Symposium on VLSI Technology.
Read moreA look at Samsung’s 11nm 11LPP process that was recently disclosed at the 38th Symposium on VLSI Technology.
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